BEST SELL
TMS320F28334ZJZS
Texas Instruments
RFQ List
Yes. STV240N75F3 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.
Pricing for STV240N75F3 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.
STV240N75F3 is a STMicroelectronics Transistors with Packaging: Tape & Reel (TR) and Current - Continuous Drain (Id) @ 25°C: 240A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.
Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.
If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.
Yes. If STV240N75F3 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.
Looking for Pricing? Contact us for volume pricing.
IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
This STV240N75F3 is an N-channel Power MOSFET developed using STripFET? F3 technology. STV240N75F3 is designed to deliver enhanced switching performance by reducing on-resistance and gate charge.
Conduction losses reduced
Low profile, very low parasitic inductance
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 240 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
Package: POWERSO10
Switching applications
High-speed DC-DC converters
RF envelope tracking
Class-D audio amplifiers
Class-E wireless charging
High-precision motor control
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
TMS320F28334ZJZS
Texas Instruments
VN7050AJTR
STMicroelectronics
PI7C9X2G1616PRAHSBE
DIODES
ISL94202IRTZ-T
RENESAS
ISO7721DR
Texas Instruments
MTFC8GAKAJCN-4M IT
Micron
89H16NT16G2ZCHLG
RENESAS
ATSAME70Q20B-AN
Microchip
MT41K512M16VRP-107 IT:P
Micron
MT47H128M16RT-25E IT:C
Micron
No recently viewed products
