Part No:
STX13003
Category:
Transistors
Description:
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Package:
-
Production Status:
In Stock Status:
Specification
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material
Moisture Sensitivity Level (MSL)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Emitter Base Voltage (VEBO)
Products Detail
STX13003 Overview
This device has a DC current gain of 8 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 500mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 1A volts is possible.
STX13003 Features
the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1A
STX13003 Applications
There are a lot of STMicroelectronics
STX13003 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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