Part No:
CSD25302Q2
Category:
Transistors
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 49m ? @ 3A, 4.5V ±8V 350pF @ 10V 3.4nC @ 4.5V 20V 6-SMD, Flat Leads
Package:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain Current-Max (Abs) (ID)
Drain-source On Resistance-Max
Drain to Source Breakdown Voltage
Pulsed Drain Current-Max (IDM)
Products Detail
CSD25302Q2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 10V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 5A.When the device is turned off, a turn-off delay time of 8.6 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 20A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -650mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
CSD25302Q2 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 8.6 ns
based on its rated peak drain current 20A.
a threshold voltage of -650mV
a 20V drain to source voltage (Vdss)
CSD25302Q2 Applications
There are a lot of Texas Instruments
CSD25302Q2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
Key Features
No key features available
Application scenarios
No application scenarios available
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