OP231W [TT Electronics]

Name: OP231W
Brand: TT Electronics
SKU: OP231W
Availability: InStock

Part No:

OP231W

LEDs

Manufacturer:

TT Electronics

Description:

Hermetic Infrared Emitting Diode OP230 Series

Datasheet:

Product FAQ

1. Is OP231W available for RFQ?

Yes. OP231W by TT Electronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for OP231W?

Pricing for OP231W can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of OP231W?

OP231W is a TT Electronics LEDs with Lead Soldering Temperature: 260°C and Continuous Forward Current: 100mA. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for OP231W?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can OP231W be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to OP231W?

Yes. If OP231W is unavailable, obsolete, or does not meet your required lead time, we can help check similar TT Electronics LEDs parts or compatible alternatives.

RFQ

Part Number:

OP231W

Manufacturer:

TT Electronics

Looking for Pricing? Contact us for volume pricing.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO-46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Devices are lensed to provide either narrow (18°) or wide (50°) beam angles between half power points. The 890 nm or 850 nm wavelength closely matches the spectral response of silicon phototransistors. The series is mechanically and spectrally matched to Optek phototransistor devices.