Micron

441-Ball, x32 Automotive LPDDR5X SDRAM (Y52P) Y52P, LPDDR5X, QDP (8GB), 8DP (16GB), 441b, MT62F1G64D4, MT62F2G64D8 MT62F2G64D8EK-023 AIT:C is a Micron 128Gbit / 16GB LPDDR5X mobile DRAM component organized as 2G x 64 and supplied in a compact 441-ball TFBGA package. It supports up to 8533MT/s data rate, 4266MHz clock frequency, 1.05V VDD2H / 0.5V VDDQ operation, 8-die stacked configuration, and an automotive-grade -40°C to +95°C temperature range. It is suitable for automotive infotainment, digital cockpit systems, ADAS platforms, edge AI devices, embedded computing, mobile devices, industrial vision systems, networking equipment, video processing, and high-performance SoC-based designs requiring high-bandwidth low-power memory. File Type: pdf Updated: 2025-09-15

MT25QL128ABA1ESE-0SIT is a 128Mbit Serial NOR Flash memory IC from Micron Technology, featuring a SPI / Quad I/O interface, 133MHz maximum clock frequency, 2.7V to 3.6V supply voltage, and industrial temperature operation. It is suitable for firmware storage, boot code, execute-in-place applications, embedded systems, industrial controllers, networking equipment, and MCU/FPGA-based designs.

MT53D1024M32D4DT-046 AAT:D is a 32Gb LPDDR4 SDRAM device manufactured by Micron Technology. Featuring a 1G × 32 organization, 32-bit data bus width, 2.133GHz maximum clock frequency, LPDDR4-4266 class performance, compact 200-ball VFBGA package, and wide-temperature operation listed at -40°C to +105°C, it is suitable for automotive electronics, infotainment systems, telematics, industrial HMI, embedded computing, networking equipment, edge AI modules, smart displays, and high-performance compact electronic systems. The MT53D1024M32D4DT-046 AAT:D provides high-bandwidth, low-power Micron LPDDR4 memory performance for demanding embedded and automotive-grade system designs.

MT62F2G64D8EK-023 FAIT:C is a 128Gb LPDDR5 SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 64 organization, x64 data bus, 441-ball TFBGA package, and high-speed LPDDR5 mobile DRAM architecture, it is designed for smartphones, tablets, automotive electronics, AI edge devices, embedded computing platforms, smart cameras, and multimedia systems. The MT62F2G64D8EK-023 FAIT:C delivers high memory density, low power consumption, compact integration, and reliable Micron LPDDR5 performance for advanced electronic designs.

IC DRAM 32GBIT 2.133GHZ 200VFBGA.SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 200-VFBGA (10x14.5)

MT41K256M16TW-107 IT:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V low-power operation, compact 96-ball FBGA / TFBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage controllers, consumer electronics, and long-life commercial devices. The MT41K256M16TW-107 IT:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT60B4G8AT-64B:B is a Micron 32Gbit DDR5 SDRAM memory IC organized as 4G x 8 and supplied in a 78/117-ball VFBGA package. Designed for DDR5-6400 class high-bandwidth memory systems, it is suitable for servers, data centers, AI computing platforms, networking equipment, telecom infrastructure, industrial computing, storage systems, embedded high-performance boards, and other applications requiring high-density, high-speed external system memory.

MT29F2G08ABAGAWP-IT:G is a 2Gbit SLC NAND Flash memory IC from Micron Technology, organized as 256M × 8 and supplied in a 48-pin TSOP-I package. With a parallel NAND interface, 2.7V to 3.6V supply voltage, and -40°C to +85°C operating temperature range, it is suitable for embedded systems, industrial controllers, networking equipment, consumer electronics, automotive electronics, and other applications requiring reliable non-volatile storage.

M25P80-VMW6TG is an 8Mb SPI Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI-compatible serial interface, 75MHz maximum clock frequency, 2.7V to 3.6V single-supply operation, page program support, sector erase capability, and compact SOIC-8 wide surface-mount package, it is suitable for embedded boot memory, firmware storage, configuration memory, industrial control systems, networking equipment, consumer electronics, and legacy product repair. The M25P80-VMW6TG provides reliable Micron Serial NOR Flash performance for mature 3.3V embedded storage designs.

MT25QL01GBBB8ESF-0SIT is a 1Gb 3V Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI / Dual SPI / Quad SPI interface, 133MHz clock frequency, 2.7V to 3.6V supply voltage, 16-pin SOIC / WSOIC package, and -40°C to +85°C industrial temperature range, it is suitable for embedded boot memory, firmware storage, FPGA configuration, BIOS/UEFI storage, industrial control systems, networking equipment, telecom infrastructure, IoT devices, consumer electronics, and transportation systems. The MT25QL01GBBB8ESF-0SIT delivers reliable Micron Serial NOR Flash performance for compact, high-capacity, and industrial-grade embedded storage designs.

MT29F16G08ABACAWP-ITZ:C is a 16Gb SLC NAND Flash memory device manufactured by Micron Technology. Featuring a 2G × 8 organization, x8 parallel NAND interface, 2.7V to 3.6V supply voltage, and 48-pin TSOP-I package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom terminals, medical instruments, data loggers, and consumer electronics. The MT29F16G08ABACAWP-ITZ:C delivers reliable Micron SLC NAND Flash performance for boot memory, firmware storage, non-volatile data storage, and long-life electronic designs.

MT25QU256ABA1EW7-0SIT is a 256Mb 1.8V Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI / Quad SPI interface, x4 I/O support, 166MHz high-speed operation, compact 8-pin WPDFN / MLP8 package, and -40°C to +85°C industrial temperature range, it is suitable for embedded boot memory, firmware storage, FPGA configuration, industrial control systems, networking equipment, telecom infrastructure, IoT devices, consumer electronics, and transportation systems. The MT25QU256ABA1EW7-0SIT delivers reliable Micron NOR Flash performance for compact, low-power, and high-speed embedded storage designs.

IC FLASH 4GBIT PARALLEL 48TSOP I.FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

MT41K128M16JT-125:K is a 2Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, DDR3L-1600-class speed, 800MHz clock frequency, 1.35V low-power DDR3L operation, and compact 96-ball FBGA 8mm × 14mm package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, FPGA development boards, consumer electronics, and long-life commercial devices. The MT41K128M16JT-125:K delivers reliable Micron DDR3L memory performance for compact, power-efficient, and mature electronic designs.

MT40A256M16GE-083E:B is a 4Gb DDR4 SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR4-2400-class speed, 1.2GHz clock frequency, 1.2V low-power DDR4 operation, and compact 96-FBGA 9mm × 14mm package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, storage controllers, consumer electronics, and long-life commercial devices. The MT40A256M16GE-083E:B delivers reliable Micron DDR4 memory performance for compact, efficient, and mature electronic designs.

MT41K256M16TW-107:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V low-power operation, and compact 96-ball FBGA / TFBGA package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, storage controllers, consumer electronics, and long-life commercial devices. The MT41K256M16TW-107:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and mature electronic designs.

MT41K512M16VRN-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V-class low-power operation, compact 96-FBGA 8mm × 14mm package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRN-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M16VRP-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, TwinDie™ architecture, DDR3L-1866 / 933MHz-class performance, 1.35V low-power operation, compact 96-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRP-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M8DA-107 IT:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 8 organization, DDR3L-1866-class speed, 933MHz clock frequency, 1.35V low-power operation, compact 78-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M8DA-107 IT:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M8DA-107:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 8 organization, DDR3L-1866-class speed, 933MHz clock frequency, 1.35V low-power operation, and compact 78-ball FBGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M8DA-107:P delivers reliable Micron DDR3L memory performance for mature, compact, and power-efficient electronic designs.

MT47H128M16RT-25E IT:C is a 2Gb DDR2 SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, x16 data bus, DDR2-800 / 400MHz-class speed, 1.8V operation, compact 84-ball FBGA package, and industrial-temperature ordering option, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, consumer electronics, medical devices, and instrumentation products. The MT47H128M16RT-25E IT:C provides reliable Micron DDR2 memory performance for mature, long-life, and industrial electronic designs.

MT48H32M16LFB4-6 IT:C is a 512Mb Mobile LPSDR SDRAM memory chip manufactured by Micron Technology. Featuring a 32M × 16 organization, x16 data bus, 166MHz-class clock speed, 5ns access time, compact 54-VFBGA 8mm × 8mm package, and -40°C to +85°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, portable devices, networking equipment, medical instruments, and communication modules. The MT48H32M16LFB4-6 IT:C provides reliable low-power Micron mobile SDRAM performance for mature embedded and long-life electronic designs.

MT48LC16M16A2P-6A IT:G is a 256Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 16M × 16 organization, x16 data bus, 166 / 167MHz-class clock speed, 3.3V operation, 54-pin TSOP package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC16M16A2P-6A IT:G provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems.

MT48LC4M32B2P-6A IT:L is a 128Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 4M × 32 organization, x32 data bus, 166 / 167MHz-class clock speed, 3.3V operation, TSOP-86 package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC4M32B2P-6A IT:L provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems.

MT53E2G32D4DE-046 AAT:C is a 64Gb LPDDR4X SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 32 organization, 4266MT/s-class data rate, low-power LPDDR4X architecture, and compact 200-ball TFBGA package, it is suitable for automotive electronics, embedded computing platforms, AI edge devices, smart cameras, industrial systems, multimedia equipment, and high-performance mobile products. The MT53E2G32D4DE-046 AAT:C delivers high memory density, low power consumption, compact integration, and reliable Micron mobile DRAM performance for advanced electronic designs.s

MTFC2GMDEA-0M WT A is a 2GB eMMC embedded flash memory device manufactured by Micron Technology. Featuring 16Gbit NAND Flash capacity, 2G × 8 organization, a standard MMC/eMMC interface, 2.7V to 3.6V supply voltage, and compact 153-WFBGA 11.5mm × 13mm package, it is suitable for embedded computing platforms, industrial terminals, networking equipment, consumer electronics, IoT gateways, medical instruments, and smart devices. The MTFC2GMDEA-0M WT A provides reliable managed NAND storage with simplified system integration and dependable Micron embedded memory performance.

MTFC4GACAJCN-4M IT is a 4GB eMMC 5.0 embedded flash memory device manufactured by Micron Technology. Featuring 32Gbit MLC NAND Flash capacity, an integrated eMMC controller, MMC/eMMC interface, compact 153-VFBGA 11.5mm × 13mm package, and -40°C to +85°C industrial temperature operation, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical instruments, IoT gateways, and smart devices. The MTFC4GACAJCN-4M IT provides reliable managed NAND storage with simplified system integration and dependable Micron embedded memory performance.

MTFC8GAKAJCN-4M IT is an 8GB eMMC 5.0 embedded flash memory device manufactured by Micron Technology. Featuring 64Gbit NAND Flash capacity, MLC NAND technology, MMC/eMMC interface, and a compact 153-VFBGA 11.5mm × 13mm package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical instruments, IoT gateways, and smart devices. The MTFC8GAKAJCN-4M IT provides reliable managed NAND storage with simplified system integration, industrial temperature operation, and dependable Micron embedded memory performance.

Memory IC

NOR Flash SPI 128Mbit 4 3 Volts 8/8 WPDFN 1 MT25QL128ABA is a high performance multiple input/output, 128Mb, 3V, SPI Flash memory device.

DRAM DDR4 16G 1GX16 FBGAIT IC DRAM 16GBIT PARALLEL 96FBGA

MTFDKBZ3T8TFR-1BC1ZABYY Solid State Drives - SSD 7450 4TByte E1.S 32x111x5.9

IC DRAM 8GBIT PARALLEL 78FBGA.SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 78-FBGA (7.5x11)

SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

IC DRAM 32GBIT 2.133GHZ 200VFBGA.SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 200-VFBGA (10x14.5)

Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series

Micron LPDDR5 DRAM for Mobile Devices and Artificial Intelligence (AI) is designed to meet the demands of 5G networks. The DRAM modules enable 5G smartphones to process data at peak speeds of up to 6.4Gbps, which is crucial for preventing 5G data bottlenecks. The LPDDR5 DRAM addresses these requirements with a 50% increase in data access speeds. The devices also provide more than 20% power efficiency compared with previous generations. Micron and Motorola collaborated to enable the Edge+ to reach 5G network speeds for maximum processing power and high bandwidth memory and storage. Motorola Edge+ delivers a smooth, lag-free consumer experience with 12GB of Micron LPDDR5 DRAM memory. The phones take advantage of faster data speeds and lower 5G latency to increase the performance of cloud-based applications like gaming and streaming.

Micron DDR5 SDRAM enables server workloads by delivering more than an 85% increase in memory performance. These modules increase bandwidth performance gains in data centers that require the performance advantages of DDR5 to maintain available bandwidth per CPU core. Micron DDR5 SDRAM, along with the additional compute, are instrumental in extracting value and insight from the mounds of data being generated today.

DRAM DDR5 16Gbit 16 102/153 VFBGA 1 CT

IC FLASH 2GBIT SPI 24TPBGA.FLASH - NOR Memory IC 2Gbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8)

StrataFlash™ Memory IC StrataFlash™ Series 48F4400P0

StrataFlash™ Memory IC StrataFlash™ Series 48F4400P0

StrataFlash™ Memory IC StrataFlash™ Series 28F640P33

Surface Mount StrataFlash™ 56 Pin Memory IC StrataFlash™ Series 28F640P33 64 Mb kb 18.4mm mm 28mA mA 16b b

1.81.8/3.3V V Surface Mount StrataFlash™ 56 Pin Memory IC StrataFlash™ Series 28F640P30 64 Mb kb 18.4mm mm 28mA mA 16b b

1.81.8/3.3V V Surface Mount StrataFlash™ 56 Pin Memory IC StrataFlash™ Series 28F640P30 64 Mb kb 18.4mm mm 28mA mA 16b b

StrataFlash™ Memory IC StrataFlash™ Series 28F640J3

3/3.3V V Surface Mount StrataFlash™ Memory IC StrataFlash™ Series 28F640J3 64 Mb kb

3/3.3V V Surface Mount StrataFlash™ Memory IC StrataFlash™ Series 28F320J3 32 Mb kb