Micron

8192 x 8 bit static CMOS RAM

8192 x 8 bit static CMOS RAM with low power consumption and three-state outputs.

8192 x 8 bit static CMOS RAM. The U6264B is a static RAM with 8K x 8 memory organization.

Standard 8K x 8 static RAM with 70 ns access time, low power consumption, and TTL/CMOS-compatible inputs and outputs.

The Intel® Advanced+ Boot Block Flash Memory (C3) device, manufactured on Intel’s latest 0.13µm and 0.18µm technologies, represents a feature-rich solution for low-power applications.

Numonyx Axcell Flash Memory (P33-65nm) is a high-performance NOR flash memory device with 256-Mbit and 512-Mbit densities.

Numonyx Axcell Flash Memory (P33-65nm) is a high-performance NOR flash memory device with densities of 256-Mbit and 512-Mbit.

Intel Advanced+ Boot Block Flash Memory (C3) is a feature-rich solution for low-power applications.

Intel Advanced+ Boot Block Flash Memory (C3) device, a feature-rich solution for low-power applications.

Numonyx Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) is a high-speed interface NOR device supporting code and data storage.

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

256Mb and 512Mb P30-65nm Parallel NOR Flash Memory

Numonyx P33-65nm Single Bit per Cell (SBC) Flash Memory with 64-Mbit and 128-Mbit densities.

Numonyx P33-65nm Single Bit per Cell (SBC) Flash Memory with 128-Mbit and 64-Mbit densities.

Numonyx Axcell P30-65nm Single Bit per Cell (SBC) Flash memory, offered in 64-Mbit and 128-Mbit densities, with high-speed interface and support for code and data storage.

Numonyx Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Numonyx Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Intel® Embedded Flash Memory (J3 v. D) provides improved mainstream performance with enhanced security features, using 0.13 µm ETOX™ VIII process technology.

Intel Advanced+ Boot Block Flash Memory (C3) is a feature-rich solution for low-power applications, manufactured on 0.13µm and 0.18µm technologies.

Numonyx StrataFlash Embedded Memory (P33-65nm) is a high-performance NOR flash memory with 256-Mbit and 512-Mbit densities.

Numonyx StrataFlash Embedded Memory (P33-65nm) is a high-performance NOR flash memory device with densities of 256-Mbit and 512-Mbit.

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

Numonyx Axcell Flash Memory (P30-65nm) is a high-performance flash memory device with densities of 256-Mbit and 512-Mbit.

Micron Parallel NOR Flash Embedded Memory with 256Mb and 512Mb densities, based on P30-65nm process.

The Intel® Advanced+ Boot Block Flash Memory (C3) device, manufactured on Intel’s latest 0.13µm and 0.18µm technologies, represents a feature-rich solution for low-power applications.

Numonyx P33-65nm Single Bit per Cell (SBC) Flash Memory with 64-Mbit and 128-Mbit densities, featuring high-speed interface NOR device for code and data storage.

Numonyx Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Numonyx Axcell P30-65nm Single Bit per Cell (SBC) Flash memory, offered in 64-Mbit and 128-Mbit densities.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device with 32, 64, and 128 Mbit densities, offering improved performance and enhanced security features.

Micron Parallel NOR Flash memory with densities of 512Mb, 1Gb, and 2Gb, featuring high-speed interface, low power, and flexible security options.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

3V Embedded Parallel NOR Flash memory with densities of 32Mb, 64Mb, and 128Mb.

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

The M29EW is an asynchronous, parallel NOR Flash memory device manufactured on 65nm single-bit cell (SBC) technology.

3V Embedded Parallel NOR Flash memory device with asynchronous parallel interface, manufactured on 65nm single-bit cell technology.

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

Micron Parallel NOR Flash Embedded Memory with 256Mb and 512Mb densities, based on P30-65nm technology.

Numonyx Axcell Flash Memory (P30-65nm) is the latest generation of flash memory devices, offering 256-Mbit and 512-Mbit densities.

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

Numonyx Axcell P30-65nm Flash Memory, 128-Mbit and 64-Mbit Single Bit per Cell (SBC) devices.

Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device provides improved mainstream performance with enhanced security features, available in 32, 64, and 128 Mbit densities.