0912GN-650V [Microchip]

The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal pre-match for optimal performance. This transistor can be used for broadband L-band Avionics applications including DME, IFF, Transponders, and TCAS. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.