Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

• Single voltage supply: 2.7 V to 5.5 V
• Access time: 150 ns (max) at Vcc=4.5 V to 5.5 V 250 ns (max) at Vcc=2.7 V to 5.5 V
• Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 μW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (128 bytes): 10 ms (max)
• Data polling and RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MONOS cell technology
• 104 or more erase/write cycles
• 10 or more years data retention
• Software data protection
• Write protection by RES pin
• Temperature range: -40 to +85°C
• There are lead free products.