BULB742C-1 [STMicroelectronics]

Name: BULB742C-1
Brand: STMicroelectronics
SKU: BULB742C-1
Availability: InStock

Part No:

BULB742C-1

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

NPN 150°C TJ 250?A 1 Elements 3 Terminations SILICON NPN TO-262-3 Long Leads, I2Pak, TO-262AA Tube Through Hole

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Max Power Dissipation

70W

Base Part Number

BULB742

Pin Count

3

Number of Elements

1

Element Configuration

Single

Case Connection

COLLECTOR

Power - Max

70W

Transistor Application

SWITCHING

Polarity/Channel Type

NPN

Transistor Type

NPN

Collector Emitter Voltage (VCEO)

400V

Max Collector Current

4A

DC Current Gain (hFE) (Min) @ Ic, Vce

25 @ 800mA 3V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1A, 3.5A

Collector Emitter Breakdown Voltage

400V

Emitter Base Voltage (VEBO)

15V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Products Detail

BULB742C-1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 800mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 15V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.

BULB742C-1 Features

the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V

BULB742C-1 Applications

There are a lot of STMicroelectronics
BULB742C-1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Documents

Datasheets:

BUL(B)742C

Product FAQ

1. Is BULB742C-1 available for RFQ?

Yes. BULB742C-1 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for BULB742C-1?

Pricing for BULB742C-1 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of BULB742C-1?

BULB742C-1 is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA 3V and Collector Emitter Breakdown Voltage: 400V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for BULB742C-1?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can BULB742C-1 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to BULB742C-1?

Yes. If BULB742C-1 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

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