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BQ27441DRZR-G1A
Texas Instruments
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STB25NM60N is a 600v N-channel second-generation MDmesh? Power MOSFET. This series of devices implement the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company??s strip layout to yield one of the world??s lowest on-resistance and gate charges. The STB25NM60N is, therefore, suitable for the most demanding high-efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 500v
Gate- source voltage: ?à25 V
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
No key features available
No application scenarios available
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
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