STD30NE06L [STMicroelectronics]

STD30NE06L Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2370pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.Peak drain current for this device is 120A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.

STD30NE06L Features

the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 120A.

STD30NE06L Applications

There are a lot of STMicroelectronics
STD30NE06L applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification