STD36NH02L [STMicroelectronics]

STD36NH02L Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 860pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=24V, and ID flows to VDS at 24VVDS, the drain-source breakdown voltage is 24V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V), this device helps reduce its power consumption.

STD36NH02L Features

the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 120A.

STD36NH02L Applications

There are a lot of STMicroelectronics
STD36NH02L applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,