STD40N2LH5 [STMicroelectronics]

STD40N2LH5 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 110 mJ.A device's maximal input capacitance is 700pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17.6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 22V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).

STD40N2LH5 Features

the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 17.6 ns
based on its rated peak drain current 160A.

STD40N2LH5 Applications

There are a lot of STMicroelectronics
STD40N2LH5 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples