Name: STD5NM50T4
Brand: STMicroelectronics
SKU: STD5NM50T4

STD5NM50T4 [STMicroelectronics]

Part No:

STD5NM50T4

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 800m ? @ 2.5A, 10V ±30V 415pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Weight

4.535924g

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

800mOhm

Terminal Finish

Matte Tin (Sn)

Additional Feature

AVALANCHE RATED

Voltage - Rated DC

500V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

7.5A

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STD5N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

100W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

100W

Turn On Delay Time

16 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

415pF @ 25V

Current - Continuous Drain (Id) @ 25°C

7.5A Tc

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

8ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

6 ns

Continuous Drain Current (ID)

7.5A

Threshold Voltage

JEDEC-95 Code

TO-252AA

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

500V

Height

2.4mm

Length

6.6mm

Width

6.2mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD5NM50T4 Description

The MDmeshTM is a new innovative MOSFET technology that combines the company's Power MESHTM horizontal architecture with the Multiple Drain process. The end result has an exceptional low on-resistance, an exceptionally high dv/dt, and good avalanche properties. The Company's patented strip technology produces total dynamic performance that is much better than that of equivalent competition's propulsion systems.

STD5NM50T4 Features

TYPICAL RDS(on) = 0.7?
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING

STD5NM50T4 Applications

Power Management
Consumer Electronics
Portable Devices
Industrial

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STD5NM50(-1)

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

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