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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STD5NM60-1 STMicroelectronics

    STD5NM60-1 [STMicroelectronics]

    STD5NM60-1
    STD5NM60-1

    Part No:

    STD5NM60-1

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 1 ? @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

    RoHS Status:

    Product FAQ

    1. Is STD5NM60-1 available for RFQ?

    Yes. STD5NM60-1 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD5NM60-1?

    Pricing for STD5NM60-1 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD5NM60-1?

    STD5NM60-1 is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 5A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD5NM60-1?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD5NM60-1 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD5NM60-1?

    Yes. If STD5NM60-1 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD5NM60-1

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
    Factory Lead Time
    26 Weeks
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Terminal Finish
    Matte Tin (Sn)
    Voltage - Rated DC
    650V
    Technology
    MOSFET (Metal Oxide)
    Peak Reflow Temperature (Cel)
    260
    Current Rating
    8A
    Time@Peak Reflow Temperature-Max (s)
    30
    Base Part Number
    STD5N
    Pin Count
    3
    Number of Elements
    1
    Power Dissipation-Max
    96W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    96W
    Turn On Delay Time
    14 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    5A Tc
    Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
    Rise Time
    10ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Fall Time (Typ)
    10 ns
    Turn-Off Delay Time
    23 ns
    Continuous Drain Current (ID)
    5A
    Threshold Voltage
    4V
    Gate to Source Voltage (Vgs)
    30V
    Drain Current-Max (Abs) (ID)
    5A
    Drain-source On Resistance-Max
    1Ohm
    Drain to Source Breakdown Voltage
    600V
    Pulsed Drain Current-Max (IDM)
    20A
    Avalanche Energy Rating (Eas)
    200 mJ
    Height
    6.2mm
    Length
    6.6mm
    Width
    2.4mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STD5NM60-1 Overview


    The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

    STD5NM60-1 Features


    the avalanche energy rating (Eas) is 200 mJ
    a continuous drain current (ID) of 5A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 23 ns
    based on its rated peak drain current 20A.
    a threshold voltage of 4V


    STD5NM60-1 Applications


    There are a lot of STMicroelectronics
    STD5NM60-1 applications of single MOSFETs transistors.


    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies

    Documents

    Datasheets:

    STD5NM60, STB8NM60, STP8NM60
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
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