STD60NF55LAT4 [STMicroelectronics]

STD60NF55LAT4 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

STD60NF55LAT4 Features

the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 80 ns
based on its rated peak drain current 240A.
a 55V drain to source voltage (Vdss)

STD60NF55LAT4 Applications

There are a lot of STMicroelectronics
STD60NF55LAT4 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples