STD6N65M2 [STMicroelectronics]

Name: STD6N65M2
Brand: STMicroelectronics
SKU: STD6N65M2

Part No:

STD6N65M2

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.35 ? @ 2A, 10V ±25V 226pF @ 100V 9.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Factory Lead Time

16 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Weight

3.949996g

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STD6N

Number of Channels

1

Power Dissipation-Max

60W Tc

Turn On Delay Time

19 ns

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

226pF @ 100V

Current - Continuous Drain (Id) @ 25°C

4A Tc

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Rise Time

7ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

20 ns

Turn-Off Delay Time

6.5 ns

Continuous Drain Current (ID)

4A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

650V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Products Detail

STD6N65M2 Description

The STD6N65M2 is an MDmesh? N-channel Power MOSFET that offers Zener protection and an extremely low gate charge. The STD6N65M2 Power MOSFET was developed using MDmesh? M2 technology which has a strip layout and an improved vertical structure, and it exhibits low ON-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.