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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STD7N52DK3 STMicroelectronics

    STD7N52DK3 [STMicroelectronics]

    STD7N52DK3
    STD7N52DK3

    Part No:

    STD7N52DK3

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.15 ? @ 3A, 10V ±30V 870pF @ 50V 33nC @ 10V 525V TO-252-3, DPak (2 Leads + Tab), SC-63

    RoHS Status:

    Product FAQ

    1. Is STD7N52DK3 available for RFQ?

    Yes. STD7N52DK3 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD7N52DK3?

    Pricing for STD7N52DK3 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD7N52DK3?

    STD7N52DK3 is a STMicroelectronics Transistors with Packaging: Tape & Reel (TR) and Current - Continuous Drain (Id) @ 25°C: 6A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD7N52DK3?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD7N52DK3 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD7N52DK3?

    Yes. If STD7N52DK3 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD7N52DK3

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    NRND (Last Updated: 7 months ago)
    Factory Lead Time
    12 Weeks
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tape & Reel (TR)
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Resistance
    1.15Ohm
    Terminal Finish
    Matte Tin (Sn) - annealed
    Additional Feature
    ULTRA-LOW RESISTANCE
    Technology
    MOSFET (Metal Oxide)
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    260
    Base Part Number
    STD7
    Pin Count
    3
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Power Dissipation-Max
    90W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    90W
    Turn On Delay Time
    12 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    6A Tc
    Gate Charge (Qg) (Max) @ Vgs
    33nC @ 10V
    Rise Time
    22ns
    Drain to Source Voltage (Vdss)
    525V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Fall Time (Typ)
    22 ns
    Turn-Off Delay Time
    37 ns
    Continuous Drain Current (ID)
    6A
    Threshold Voltage
    3.75V
    Gate to Source Voltage (Vgs)
    30V
    Drain Current-Max (Abs) (ID)
    6A
    Drain to Source Breakdown Voltage
    620V
    Pulsed Drain Current-Max (IDM)
    24A
    Avalanche Energy Rating (Eas)
    100 mJ
    Height
    2.4mm
    Length
    6.6mm
    Width
    6.2mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STD7N52DK3 Overview


    When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=620V. And this device has 620V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 24A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. Operating this transistor requires a 525V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

    STD7N52DK3 Features


    the avalanche energy rating (Eas) is 100 mJ
    a continuous drain current (ID) of 6A
    a drain-to-source breakdown voltage of 620V voltage
    the turn-off delay time is 37 ns
    based on its rated peak drain current 24A.
    a threshold voltage of 3.75V
    a 525V drain to source voltage (Vdss)


    STD7N52DK3 Applications


    There are a lot of STMicroelectronics
    STD7N52DK3 applications of single MOSFETs transistors.


    • LCD/LED TV
    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools

    Documents

    Datasheets:

    STx7N52DK3STD7N52DK3-STMicroelectronics-datasheet-10837504.pdfSTD7N52DK3-STMicroelectronics-datasheet-21217307.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

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