STP33N65M2 [STMicroelectronics]

Name: STP33N65M2
Brand: STMicroelectronics
SKU: STP33N65M2

Part No:

STP33N65M2

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 140m ? @ 12A, 10V ±25V 1790pF @ 100V 41.5nC @ 10V 650V TO-220-3

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

16 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Base Part Number

STP33N

Number of Elements

1

Power Dissipation-Max

190W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

13.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1790pF @ 100V

Current - Continuous Drain (Id) @ 25°C

24A Tc

Gate Charge (Qg) (Max) @ Vgs

41.5nC @ 10V

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Turn-Off Delay Time

72.5 ns

Continuous Drain Current (ID)

24A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

25V

Drain-source On Resistance-Max

0.14Ohm

Pulsed Drain Current-Max (IDM)

96A

DS Breakdown Voltage-Min

650V

Avalanche Energy Rating (Eas)

780 mJ

Height

15.75mm

Length

10.4mm

Width

4.6mm

RoHS Status

RoHS Compliant

Products Detail

STP33N65M2 Description

MDmeshTM M2 technology was used to build STP33N65M2, which are N-channel Power MOSFETs. The devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high efficiency converters.

STP33N65M2 Features

? The gate charge is really inexpensive.

? The output capacitance (Coss) profile is excellent.

? Avalanche-proofed to the nth degree

? Protected by a zener

STP33N65M2 Applications

Switching applications

Documents

Datasheets:

STx33N65M2

Product FAQ

1. Is STP33N65M2 available for RFQ?

Yes. STP33N65M2 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for STP33N65M2?

Pricing for STP33N65M2 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of STP33N65M2?

STP33N65M2 is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 24A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for STP33N65M2?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can STP33N65M2 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to STP33N65M2?

Yes. If STP33N65M2 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

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