STD90N03L [STMicroelectronics]

STD90N03L Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 350 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2805pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

STD90N03L Features

the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 320A.

STD90N03L Applications

There are a lot of STMicroelectronics
STD90N03L applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.