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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STD1NK60T4 STMicroelectronics

    STD1NK60T4 [STMicroelectronics]

    STD1NK60T4
    STD1NK60T4

    Part No:

    STD1NK60T4

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5 ? @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

    RoHS Status:

    Product FAQ

    1. Is STD1NK60T4 available for RFQ?

    Yes. STD1NK60T4 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD1NK60T4?

    Pricing for STD1NK60T4 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD1NK60T4?

    STD1NK60T4 is a STMicroelectronics Transistors with Packaging: Tape & Reel (TR) and Current - Continuous Drain (Id) @ 25°C: 1A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD1NK60T4?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD1NK60T4 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD1NK60T4?

    Yes. If STD1NK60T4 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD1NK60T4

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
    Factory Lead Time
    12 Weeks
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Manufacturer Package Identifier
    TO-252-P032P
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Tape & Reel (TR)
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Resistance
    8.5Ohm
    Terminal Finish
    Matte Tin (Sn) - annealed
    Voltage - Rated DC
    600V
    Technology
    MOSFET (Metal Oxide)
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    260
    Current Rating
    1A
    Base Part Number
    STD1NK
    Pin Count
    3
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Number of Channels
    1
    Power Dissipation-Max
    30W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    30W
    Turn On Delay Time
    6.5 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    156pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    1A Tc
    Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
    Rise Time
    5ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Fall Time (Typ)
    25 ns
    Turn-Off Delay Time
    19 ns
    Continuous Drain Current (ID)
    1A
    Threshold Voltage
    3V
    JEDEC-95 Code
    TO-252AA
    Gate to Source Voltage (Vgs)
    30V
    Drain Current-Max (Abs) (ID)
    1A
    Drain to Source Breakdown Voltage
    600V
    Pulsed Drain Current-Max (IDM)
    4A
    Avalanche Energy Rating (Eas)
    25 mJ
    Max Junction Temperature (Tj)
    150°C
    Height
    2.63mm
    Length
    6.6mm
    Width
    6.2mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STD1NK60T4 Overview


    Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

    STD1NK60T4 Features


    the avalanche energy rating (Eas) is 25 mJ
    a continuous drain current (ID) of 1A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 19 ns
    based on its rated peak drain current 4A.
    a threshold voltage of 3V


    STD1NK60T4 Applications


    There are a lot of STMicroelectronics
    STD1NK60T4 applications of single MOSFETs transistors.


    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples

    Documents

    Datasheets:

    STx1(H)NK60(-1,R)
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

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