Part No:
STD1NK60T4
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5 ? @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Package:
-
Production Status:
In Stock Status:
Specification
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
Manufacturer Package Identifier
Moisture Sensitivity Level (MSL)
Terminal Finish
Matte Tin (Sn) - annealed
Peak Reflow Temperature (Cel)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain Current-Max (Abs) (ID)
Drain to Source Breakdown Voltage
Pulsed Drain Current-Max (IDM)
Avalanche Energy Rating (Eas)
Max Junction Temperature (Tj)
Products Detail
STD1NK60T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD1NK60T4 Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V
STD1NK60T4 Applications
There are a lot of STMicroelectronics
STD1NK60T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
Key Features
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Application scenarios
No application scenarios available
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