STD9NM60N [STMicroelectronics]

Name: STD9NM60N
Brand: STMicroelectronics
SKU: STD9NM60N

Part No:

STD9NM60N

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 745m ? @ 3.25A, 10V ±25V 452pF @ 50V 17.4nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

16 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

745mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STD9N

Pin Count

3

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max

70W Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

70W

Turn On Delay Time

28 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

452pF @ 50V

Current - Continuous Drain (Id) @ 25°C

6.5A Tc

Gate Charge (Qg) (Max) @ Vgs

17.4nC @ 10V

Rise Time

23ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

26.7 ns

Turn-Off Delay Time

52.5 ns

Continuous Drain Current (ID)

6.5A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

25V

Drain Current-Max (Abs) (ID)

9A

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

26A

Height

2.4mm

Length

6.6mm

Width

6.2mm

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD9NM60N Description

The second generation of MDmeshTM technology is used to create this range of devices. This ground-breaking Power MOSFET combines a new vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.