STB25N80K5 [STMicroelectronics]

Name: STB25N80K5
Brand: STMicroelectronics
SKU: STB25N80K5

Part No:

STB25N80K5

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

Description: N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a D2PAK package

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

RoHS Status

RoHS Compliant

Part Life Cycle Code

Active

Package Description

TO-263, D2PAK-3/2

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

14 Weeks

Avalanche Energy Rating (Eas)

200 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

800 V

Drain Current-Max (ID)

19.5 A

Drain-source On Resistance-Max

0.26 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263AB

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

245

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

250 W

Pulsed Drain Current-Max (IDM)

78 A

Surface Mount

YES

Terminal Finish

Matte Tin (Sn) - annealed

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Products Detail

STB25N80K5 Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.