STF100N6F7 Description

This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

STF100N6F7 Features

• Among the lowest RDS(on) on the market

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

STF100N6F7 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial