STF10NM60N [STMicroelectronics]

Name: STF10NM60N
Brand: STMicroelectronics
SKU: STF10NM60N

Part No:

STF10NM60N

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 550m ? @ 4A, 10V ±25V 540pF @ 50V 19nC @ 10V 600V TO-220-3 Full Pack

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

16 Weeks

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Base Part Number

STF10N

Pin Count

3

Number of Elements

1

Power Dissipation-Max

25W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

25W

Case Connection

ISOLATED

Turn On Delay Time

10 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 50V

Current - Continuous Drain (Id) @ 25°C

10A Tc

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Rise Time

12ns

Drain to Source Voltage (Vdss)

600V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

15 ns

Turn-Off Delay Time

32 ns

Continuous Drain Current (ID)

10A

Threshold Voltage

3V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

25V

Drain Current-Max (Abs) (ID)

8A

Drain-source On Resistance-Max

0.55Ohm

DS Breakdown Voltage-Min

600V

Avalanche Energy Rating (Eas)

200 mJ

Height

16.4mm

Length

10.4mm

Width

4.6mm

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STF10NM60N Description

STF10NM60N is an N-channel Power MOSFET designed with MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.

STF10NM60N Features

?Avalanche-proofed to the nth degree

? Low gate charge and input capacitance

? Input gate resistance is low

STF10NM60N Applications

Switching applications

Documents

Datasheets:

STx10NM60N

Product FAQ

1. Is STF10NM60N available for RFQ?

Yes. STF10NM60N by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for STF10NM60N?

Pricing for STF10NM60N can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of STF10NM60N?

STF10NM60N is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 10A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for STF10NM60N?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can STF10NM60N be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to STF10NM60N?

Yes. If STF10NM60N is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

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