STF817A [STMicroelectronics]

STF817A Overview

In this device, the DC current gain is 30 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3A).50MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.

STF817A Features

the DC current gain for this device is 30 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 50MHz

STF817A Applications

There are a lot of STMicroelectronics
STF817A applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting