STF826 [STMicroelectronics]

STF826 Overview

In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.1V @ 150mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

STF826 Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

STF826 Applications

There are a lot of STMicroelectronics
STF826 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting