STF9N60M2 [STMicroelectronics]

Name: STF9N60M2
Brand: STMicroelectronics
SKU: STF9N60M2

Part No:

STF9N60M2

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 780m ? @ 3A, 10V ±25V 320pF @ 100V 10nC @ 10V 600V TO-220-3 Full Pack

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

16 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Operating Temperature

150°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Base Part Number

STF9

Power Dissipation-Max

20W Tc

Element Configuration

Single

Turn On Delay Time

8.8 ns

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 100V

Current - Continuous Drain (Id) @ 25°C

5.5A Tc

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Rise Time

7.5ns

Drain to Source Voltage (Vdss)

600V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

13.5 ns

Turn-Off Delay Time

22 ns

Continuous Drain Current (ID)

5.5A

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

650V

Height

16.4mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STF9N60M2 Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.

STF9N60M2 Features

Extremely low gate charge

Lower RDS(on) x area vs the previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

STF9N60M2 Applications

Switching applications