STH210N75F6-2 [STMicroelectronics]

STH210N75F6-2 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 180A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [154 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 720A.A turn-on delay time of 34 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STH210N75F6-2 Features

a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 154 ns
based on its rated peak drain current 720A.
a threshold voltage of 2V

STH210N75F6-2 Applications

There are a lot of STMicroelectronics
STH210N75F6-2 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies