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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STI23NM60N STMicroelectronics

    STI23NM60N [STMicroelectronics]

    STI23NM60N
    STI23NM60N

    Part No:

    STI23NM60N

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 180m ? @ 9.5A, 10V ±25V 2050pF @ 50V 60nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

    RoHS Status:

    Product FAQ

    1. Is STI23NM60N available for RFQ?

    Yes. STI23NM60N by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STI23NM60N?

    Pricing for STI23NM60N can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STI23NM60N?

    STI23NM60N is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 19A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STI23NM60N?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STI23NM60N be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STI23NM60N?

    Yes. If STI23NM60N is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STI23NM60N

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Pbfree Code
    yes
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    Terminal Finish
    MATTE TIN
    Technology
    MOSFET (Metal Oxide)
    Peak Reflow Temperature (Cel)
    245
    Time@Peak Reflow Temperature-Max (s)
    40
    Base Part Number
    STI23N
    Pin Count
    3
    Number of Elements
    1
    Power Dissipation-Max
    150W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    150W
    Turn On Delay Time
    25 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    2050pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    19A Tc
    Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
    Rise Time
    15ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Fall Time (Typ)
    36 ns
    Turn-Off Delay Time
    90 ns
    Continuous Drain Current (ID)
    9.5A
    Threshold Voltage
    3V
    Gate to Source Voltage (Vgs)
    25V
    Drain Current-Max (Abs) (ID)
    19A
    Drain-source On Resistance-Max
    0.18Ohm
    Drain to Source Breakdown Voltage
    600V
    Pulsed Drain Current-Max (IDM)
    76A
    Avalanche Energy Rating (Eas)
    700 mJ
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant

    Products Detail

    STI23NM60N Overview


    In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2050pF @ 50V.This device conducts a continuous drain current (ID) of 9.5A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 19A.When the device is turned off, a turn-off delay time of 90 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 76A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

    STI23NM60N Features


    the avalanche energy rating (Eas) is 700 mJ
    a continuous drain current (ID) of 9.5A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 90 ns
    based on its rated peak drain current 76A.
    a threshold voltage of 3V


    STI23NM60N Applications


    There are a lot of STMicroelectronics
    STI23NM60N applications of single MOSFETs transistors.


    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies
    • PFC stages, hard switching PWM stages and resonant switching

    Documents

    Datasheets:

    STx23NM60N
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
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