STW12N170K5 [STMicroelectronics]

STW12N170K5 Description

This MDmeshTM K5 technology-based, patented vertical structure is used to create this very high voltage N-channel Power MOSFET. For applications needing a high power density and efficiency, the end result is a significantly reduced on-resistance and ultra-low gate charge.

STW12N170K5 Features

• Industry??s lowest RDS(on) x area

• Industry??s best FoM (figure of merit)

• Ultra-low gate charge

• 100% avalanche tested

• Zener-protected

STW12N170K5 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial