STW21NM60N [STMicroelectronics]

Name: STW21NM60N
Brand: STMicroelectronics
SKU: STW21NM60N

Part No:

STW21NM60N

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 220m ? @ 8.5A, 10V ±25V 1900pF @ 50V 66nC @ 10V TO-247-3

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tube

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Voltage - Rated DC

600V

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Current Rating

17A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STW21N

Pin Count

Qualification Status

Not Qualified

Number of Elements

Power Dissipation-Max

140W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

140W

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 50V

Current - Continuous Drain (Id) @ 25°C

17A Tc

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Rise Time

15ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

31 ns

Turn-Off Delay Time

84 ns

Continuous Drain Current (ID)

17A

Threshold Voltage

JEDEC-95 Code

TO-247AD

Gate to Source Voltage (Vgs)

25V

Drain-source On Resistance-Max

0.22Ohm

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

68A

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STW21NM60N Description

STW21NM60N is an N-channel MDmesh? II Power MOSFET. This series of devices is realized with the second generation of MDmesh? technology. This revolutionary MOSFET associates a new vertical structure to the company??s strip layout to yield one of the world??s lowest on-resistance and gate charges. The STMicroelectronics STW21NM60N is therefore suitable for the most demanding high-efficiency converters.

STW21NM60N Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 600v
Gate- source voltage: ?à25v

STW21NM60N Applications

Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx21NM60N(-1)

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

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Feature

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IMPORTANT NOTICE

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