M95P08-IXMNT/E [STMicroelectronics]

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology.

The M95P08-I and M95P08-E are an 8-Mbit SPI page EEPROM device organized as 2048 programmable pages of 512 bytes each, accessed through an SPI bus with high-performance dual- and quad SPI outputs.

The devices offer two additional (identification) 512-byte pages:

Additional status, configuration, and volatile registers set the desired device configuration, while the safety register provides information on the device status.

The M95P08-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40 °C to +85 °C.

The M95P08-E offers an extended temperature range from -40 °C to +105 °C. The device supports a clock frequency of up to 80 MHz.

The M95P08-I and M95P08-E offer byte and page write instructions of up to 512 bytes. Write instructions consist in self-timed auto erase and program operations, resulting in flexible data byte management.

The devices also accept page/block/sector/chip erase commands to set the memory to an erased state.

The memory can then be fast-programmed by 512-byte pages, and further optimized using the Page program with buffer load instruction to hide the SPI communication latency.

• Interface
  • Supports serial peripheral interface (SPI) and dual/quad outputs
• High speed frequency
  • Clock frequency up to 80 MHz
  • Fast read single/dual/quad output with one dummy byte
    • Dual output data transfer up to 160 Mbits/s
    • Quad output data transfer up to 320Mbits/s
• Memory
  • 8 Mbits of page EEPROM
  • 64-Kbyte blocks, 4-Kbyte sectors
  • Page size: 512-byte
  • Two additional 512-byte identification pages
• Supply voltage
  • Wide voltage range: V_CC from 1.6 to 3.6 V
• Temperature
  • Operating temperature range:
    • -40 °C to +85 °C (industrial)
    • -40 °C to +105 °C (extended)
• Performance
  • Write endurance: 500 kcycles on full temperature range
  • Data retention
    • 100 years
    • 10 years after 500 kcycles
• Ultra-low power consumption
  • 0.6 μA (typ) in Deep power-down mode
  • 16 μA (typ) in Standby mode
  • 800 μA (typ) for read single at 10 MHz
  • 1.5 mA (typ) for page write
  • Current peak control < 3 mA
• High write / erase performance
  • Fast write / program / erase times:
    • 2 ms (typ) for Byte and Page write (includes auto erase and program) for 512 bytes
    • 1.2 ms (typ) for Page program (512 bytes)
    • 1.1 ms (typ) for Page erase
    • 1.3 ms (typ) for sector erase
    • 4 ms (typ) for block erase
    • 4 ms (typ) for chip erase
  • Page program with buffer load
• Advanced features
  • ECC for high memory reliability (DEC, TED)
  • Schmitt trigger inputs for noise filtering
  • Output buffer programmable strength
  • Operating status flags for ISO26262
  • Software reset
  • Write protection by block, with top/bottom option
  • Unique ID upon request
  • Electronic identification
  • Supports SFDP (serial flash discoverable parameters) mode
  • JEDEC standard manufacturer identification
• Package
  • ECOPACK2 (RoHS compliant) and halogen-free packages:
    • DFN8 2 x 3 mm
    • SO8N
    • WLCSP8
• ESD protection
  • Enhanced ESD HBM (human body model)