STB18N60DM2 [STMicroelectronics]

STB18N60DM2 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 800pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 9.5 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STB18N60DM2 Features

a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 9.5 ns
a threshold voltage of 4V

STB18N60DM2 Applications

There are a lot of STMicroelectronics
STB18N60DM2 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification