STD20NF06T4 [STMicroelectronics]

Name: STD20NF06T4
Brand: STMicroelectronics
SKU: STD20NF06T4

Part No:

STD20NF06T4

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 40m ? @ 12A, 10V ±20V 690pF @ 25V 31nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

40mOhm

Voltage - Rated DC

60V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

24A

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STD20N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

60W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

60W

Case Connection

DRAIN

Turn On Delay Time

10 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

690pF @ 25V

Current - Continuous Drain (Id) @ 25°C

24A Tc

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Rise Time

30ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

8 ns

Turn-Off Delay Time

30 ns

Continuous Drain Current (ID)

24A

Threshold Voltage

JEDEC-95 Code

TO-252AA

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Pulsed Drain Current-Max (IDM)

96A

Height

2.4mm

Length

6.6mm

Width

6.2mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD20NF06T4 Description

The STD20NF06T4 is a single power MOSFET made by STMicroelectronics. STD20NF06T4's working temperature is -55°C175°C TJ, and its power dissipation is 60W. This Power MOSFET is the most recent evolution of STMicroelectronics' strip-based "Single Feature SizeTM" technology. The resulting transistor has a high packing density for low on-resistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing reproducibility.

STD20NF06T4 Features

? Exceptional DV/DT capability

? Application-oriented characterization

? 100% avalanche tested

STD20NF06T4 Applications

? Switching application

? Active Clamp Switch

? Switch application

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STD20NF06

RFQ

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