STD3NK60ZD [STMicroelectronics]

STD3NK60ZD Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 311pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Peak drain current is 9.6A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STD3NK60ZD Features

the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 9.6A.

STD3NK60ZD Applications

There are a lot of STMicroelectronics
STD3NK60ZD applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies