STD3NM50T4 [STMicroelectronics]

STD3NM50T4 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 130 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 140pF @ 25V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=550V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 550V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.Pulsed drain current is maximum rated peak drain current 12A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STD3NM50T4 Features

the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 550V voltage
based on its rated peak drain current 12A.

STD3NM50T4 Applications

There are a lot of STMicroelectronics
STD3NM50T4 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching