STD5NM50AG [STMicroelectronics]

STD5NM50AG Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 300 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 415pF @ 100V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 7.5A.Peak drain current is 30A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STD5NM50AG Features

the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)

STD5NM50AG Applications

There are a lot of STMicroelectronics
STD5NM50AG applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies