Part No:
STD7NM80-1
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.05 ? @ 3.25A, 10V ±30V 620pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
Package:
-
Production Status:
In Stock Status:
Specification
Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount, Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material
Moisture Sensitivity Level (MSL)
Terminal Finish
Matte Tin (Sn) - annealed
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain to Source Breakdown Voltage
Pulsed Drain Current-Max (IDM)
Avalanche Energy Rating (Eas)
Products Detail
STD7NM80-1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 620pF @ 25V.This device has a continuous drain current (ID) of [6.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.A maximum pulsed drain current of 26A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).
STD7NM80-1 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 26A.
a threshold voltage of 4V
STD7NM80-1 Applications
There are a lot of STMicroelectronics
STD7NM80-1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
Key Features
No key features available
Application scenarios
No application scenarios available
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