STF5N80K5 Description

MDmeshTM K5 technology is used to create the STF5N80K5 MOSFET, which is built on a unique patented vertical structure. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.

STF5N80K5 Features

• RDS(on) x region with the lowest RDS(on) in the industry

• The best FoM (figure of merit) in the industry

• Gate charge is really low.

• Avalanche-proofed to the nth degree

• Zener-protected

STF5N80K5 Applications

Switching applications