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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STGB30M65DF2 STMicroelectronics

    STGB30M65DF2 [STMicroelectronics]

    STGB30M65DF2
    STGB30M65DF2

    Part No:

    STGB30M65DF2

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    Description: Trench gate field-stop IGBT M series, 650 V 30 A low loss

    RoHS Status:

    Product FAQ

    1. Is STGB30M65DF2 available for RFQ?

    Yes. STGB30M65DF2 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STGB30M65DF2?

    Pricing for STGB30M65DF2 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STGB30M65DF2?

    STGB30M65DF2 is a STMicroelectronics Transistors with Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED and Collector-Emitter Voltage-Max: 650 V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STGB30M65DF2?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STGB30M65DF2 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STGB30M65DF2?

    Yes. If STGB30M65DF2 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STGB30M65DF2

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    RoHS Status
    RoHS Compliant
    Part Life Cycle Code
    Active
    Package Description
    TO-263, D2PAK-3/2
    Reach Compliance Code
    compliant
    ECCN Code
    EAR99
    Factory Lead Time
    15 Weeks
    Case Connection
    COLLECTOR
    Collector Current-Max (IC)
    60 A
    Collector-Emitter Voltage-Max
    650 V
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Gate-Emitter Thr Voltage-Max
    7 V
    Gate-Emitter Voltage-Max
    20 V
    JEDEC-95 Code
    TO-263AB
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Number of Terminals
    2
    Operating Temperature-Max
    175 °C
    Operating Temperature-Min
    -55 °C
    Package Body Material
    PLASTIC/EPOXY
    Package Shape
    RECTANGULAR
    Package Style
    SMALL OUTLINE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Polarity/Channel Type
    N-CHANNEL
    Power Dissipation-Max (Abs)
    258 W
    Surface Mount
    YES
    Terminal Form
    GULL WING
    Terminal Position
    SINGLE
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Transistor Application
    POWER CONTROL
    Transistor Element Material
    SILICON
    Turn-off Time-Nom (toff)
    310 ns
    Turn-on Time-Nom (ton)
    47 ns
    VCEsat-Max
    2 V

    Products Detail

    STGB30M65DF2 Description


    The STGB30M65DF2 is an IGBT that was created using a proprietary trench gate field-stop topology. The STGB30M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.



    STGB30M65DF2 Features


    • Short-circuit withstand time of 6 seconds

    • @ IC = 30 A, VCE(sat) = 1.55 V (typ.)

    • a tight distribution of parameters

    • Paralleling is safer, and the thermal resistance is lower.

    • Antiparallel diode with a soft and quick recovery time



    STGB30M65DF2 Applications


    • Motor control

    • UPS

    • PFC


    Documents

    Datasheets:

    STGB30M65DF2 Datasheet
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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