STL19N65M5 Overview

A device's maximal input capacitance is 1240pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 710V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2.3A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 11 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STL19N65M5 Features

a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 710V voltage
the turn-off delay time is 11 ns
based on its rated peak drain current 50A.
a 650V drain to source voltage (Vdss)

STL19N65M5 Applications

There are a lot of STMicroelectronics
STL19N65M5 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples