STU40N2LH5 [STMicroelectronics]

STU40N2LH5 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 110 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 700pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 40A amps.It is [17.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 160A.A turn-on delay time of 4.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 22V.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

STU40N2LH5 Features

the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 40A
the turn-off delay time is 17.6 ns
based on its rated peak drain current 160A.
a 25V drain to source voltage (Vdss)

STU40N2LH5 Applications

There are a lot of STMicroelectronics
STU40N2LH5 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies