Part No:
STU8N65M5
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tube 600m ? @ 3.5A, 10V ±25V 690pF @ 100V 15nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
Package:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material
Moisture Sensitivity Level (MSL)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain Current-Max (Abs) (ID)
Drain-source On Resistance-Max
Drain to Source Breakdown Voltage
Pulsed Drain Current-Max (IDM)
Products Detail
STU8N65M5 Overview
A device's maximum input capacitance is 690pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.Its drain current is 7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 28A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 50 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STU8N65M5 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 28A.
a threshold voltage of 4V
STU8N65M5 Applications
There are a lot of STMicroelectronics
STU8N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
Key Features
No key features available
Application scenarios
No application scenarios available
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