Name: STW60NE10
Brand: STMicroelectronics
SKU: STW60NE10

STW60NE10 [STMicroelectronics]

Part No:

STW60NE10

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 22m ? @ 30A, 10V ±20V 5300pF @ 25V 185nC @ 10V TO-247-3

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Operating Temperature

175°C TJ

Packaging

Tube

JESD-609 Code

e0

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Voltage - Rated DC

100V

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Current Rating

60A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STW60N

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Number of Elements

1

Power Dissipation-Max

180W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

180W

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

Current - Continuous Drain (Id) @ 25°C

60A Tc

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Rise Time

45ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

45 ns

Continuous Drain Current (ID)

60A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.022Ohm

Drain to Source Breakdown Voltage

100V

Pulsed Drain Current-Max (IDM)

240A

Avalanche Energy Rating (Eas)

500 mJ

RoHS Status

RoHS Compliant

Lead Free

Contains Lead

Products Detail

STW60NE10 Description

The STW60NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.