OP236TX [Optek]

Name: OP236TX
Brand: Optek
SKU: OP236TX
Availability: InStock

Part No:

OP236TX

LEDs

Manufacturer:

Optek

Description:

High reliability hermetic infrared emitting diode in TO-46 package with lens, featuring twice the power output of GaAs at same drive current and narrow beam angle.

Datasheet:

Product FAQ

1. Is OP236TX available for RFQ?

Yes. OP236TX by Optek is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for OP236TX?

Pricing for OP236TX can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of OP236TX?

OP236TX is a Optek LEDs with OP235TX Radiant Incidence Min: 1.5mW/cm² and OP236TX Radiant Incidence Min: 3.5mW/cm². Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for OP236TX?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can OP236TX be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to OP236TX?

Yes. If OP236TX is unavailable, obsolete, or does not meet your required lead time, we can help check similar Optek LEDs parts or compatible alternatives.

RFQ

Part Number:

OP236TX

Manufacturer:

Optek

Looking for Pricing? Contact us for volume pricing.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO-46 housing with 0.50" (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors. Devices have lens cans that provide an 18° beam angle between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors.