STD5N52K3 [STMicroelectronics]

Name: STD5N52K3
Brand: STMicroelectronics
SKU: STD5N52K3

Part No:

STD5N52K3

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.5 ? @ 2.2A, 10V ±30V 545pF @ 100V 17nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

12 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

1.5Ohm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Base Part Number

STD5N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max

70W Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

70W

Turn On Delay Time

9 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

545pF @ 100V

Current - Continuous Drain (Id) @ 25°C

4.4A Tc

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Rise Time

11ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

16 ns

Turn-Off Delay Time

29 ns

Continuous Drain Current (ID)

4.4A

Threshold Voltage

3.75V

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

525V

Height

2.4mm

Length

6.6mm

Width

6.2mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD5N52K3 MOSFET Description

The MDmeshTM K3 Power MOSFET STD5N52K3 is the product of STMicroelectronics' MDmeshTM technology being improved, as well as a new optimized vertical structure. The STD5N52K3 has a low on-resistance, excellent dynamic performance, and great avalanche capability, making it ideal for the most demanding applications. The Drain-Source voltage of this device is 525 V and the Gate-Source voltage is ± 30 V.

STD5N52K3 MOSFET Features

100% avalanche tested

Extremely high dv/dt capability

Gate charge minimized

Very low intrinsic capacitance

Improved diode reverse recovery characteristics

Zener-protected

STD5N52K3 MOSFET Applications

Switching Applications

TV SMPS

Fast Chargers

Adapters

LED Lightings

Micro-converters

Electric Vehicles

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STB,STD,STF,STP,STU5N52K3

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.