STFILED524 [STMicroelectronics]

STFILED524 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 110 mJ.A device's maximal input capacitance is 340pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4A, which represents the maximum continuous current it can conduct.In this device, the drain current is 4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 525V.This transistor requires a 525V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STFILED524 Features

the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 4A
the turn-off delay time is 21 ns
a 525V drain to source voltage (Vdss)

STFILED524 Applications

There are a lot of STMicroelectronics
STFILED524 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples